BSS84 MOSFET Datasheet & Specifications (Siliup, SOT-23)

P-Channel SOT-23 Logic-Level Siliup
Vds Max
60V
Id Max
130mA
Rds(on)
4.2ฮฉ@10V;4.5ฮฉ@4.5V
Vgs(th)
1.5V
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Quick Reference

The BSS84 is an P-Channel MOSFET in a SOT-23 package, manufactured by Siliup. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 130mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSiliupOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)130mAMax current handling
Power Dissipation (Pd)350mWMax thermal limit
On-Resistance (Rds(on))4.2ฮฉ@10V;4.5ฮฉ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)1.8nC@10VSwitching energy
Input Capacitance (Ciss)30pFInternal gate capacitance
Output Capacitance (Coss)10pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BRCS5P06MA P-Channel SOT-23 60V 5A 103mฮฉ@4.5V 1.5V
BLUE ROCKET ๐Ÿ“„ PDF
SI2309 P-Channel SOT-23 60V 2A 160mฮฉ@10V 1.9V
GOODWORK ๐Ÿ“„ PDF
BSS83PH6327 P-Channel SOT-23 60V 330mA 3ฮฉ@4.5V 2V
Infineon ๐Ÿ“„ PDF
BSS84-6AF P-Channel SOT-23 60V 170mA 3.5ฮฉ@4.5V 2V
FOSAN ๐Ÿ“„ PDF
LBSS84ELT1G P-Channel SOT-23 60V 130mA 6ฮฉ@5V 2V
LRC ๐Ÿ“„ PDF
BSS84PH6327 P-Channel SOT-23 60V 170mA 12ฮฉ@4.5V 2V
Infineon ๐Ÿ“„ PDF
SQ2337CES-T1_GE3 P-Channel SOT-23 80V 2.2A 241mฮฉ@10V 2V
VISHAY ๐Ÿ“„ PDF
UF07P15G-AE3-R P-Channel SOT-23 150V 700mA 3.1ฮฉ@10V 2V
UTC ๐Ÿ“„ PDF
Logic-Level P-Channel SOT-23 P-Channel