BSS83PH6327 MOSFET Datasheet & Specifications

P-Channel SOT-23 Logic-Level Infineon
Vds Max
60V
Id Max
330mA
Rds(on)
3ฮฉ@4.5V
Vgs(th)
2V

Quick Reference

The BSS83PH6327 is an P-Channel MOSFET in a SOT-23 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 330mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)330mAMax current handling
Power Dissipation (Pd)360mWMax thermal limit
On-Resistance (Rds(on))3ฮฉ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)3.57nC@10VSwitching energy
Input Capacitance (Ciss)78pFInternal gate capacitance
Output Capacitance (Coss)24pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

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SQ2337CES-T1_GE3 P-Channel SOT-23 80V 2.2A 241mฮฉ@10V 2V
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UF07P15G-AE3-R P-Channel SOT-23 150V 700mA 3.1ฮฉ@10V 2V