SI2325DS-T1-GE3 MOSFET Datasheet & Specifications
P-Channel
SOT-23
Logic-Level
VISHAY
Vds Max
150V
Id Max
690mA
Rds(on)
1.2ฮฉ@10V
Vgs(th)
2.5V
Quick Reference
The SI2325DS-T1-GE3 is an P-Channel MOSFET in a SOT-23 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 150V and a continuous drain current of 690mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 150V | Max breakdown voltage |
| Continuous Drain Current (Id) | 690mA | Max current handling |
| Power Dissipation (Pd) | 750mW | Max thermal limit |
| On-Resistance (Rds(on)) | 1.2ฮฉ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 7.7nC@75V | Switching energy |
| Input Capacitance (Ciss) | 510pF | Internal gate capacitance |
| Output Capacitance (Coss) | 30pF | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| UF07P15G-AE3-R | P-Channel | SOT-23 | 150V | 700mA | 3.1ฮฉ@10V | 2V | UTC ๐ PDF |