BSS84 MOSFET Datasheet & Specifications (R+O, SOT-23)

P-Channel SOT-23 Logic-Level R+O
Vds Max
60V
Id Max
170mA
Rds(on)
3.3Ω@10V;3.5Ω@4.5V
Vgs(th)
1.4V

Quick Reference

The BSS84 is an P-Channel MOSFET in a SOT-23 package, manufactured by R+O. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 170mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)170mAMax current handling
Power Dissipation (Pd)680mWMax thermal limit
On-Resistance (Rds(on))3.3Ω@10V;3.5Ω@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.4VVoltage required to turn on
Gate Charge (Qg)1.77nC@10VSwitching energy
Input Capacitance (Ciss)43pFInternal gate capacitance
Output Capacitance (Coss)2.9pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BRCS5P06MA P-Channel SOT-23 60V 5A 103mΩ@4.5V 1.5V
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SI2309 P-Channel SOT-23 60V 2A 160mΩ@10V 1.9V
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