DMN2300UFL4Q-7 MOSFET Array Datasheet & Equivalents

N-Channel Array - Logic-Level DIODES
Vds Max
20V
Id Max
2.11A
Rds(on)
520mΩ@1.5V
Vgs(th)
950mV

Quick Reference

The DMN2300UFL4Q-7 is a N-Channel Array in a - package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 2.11A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)2.11AMax current handling
Power Dissipation (Pd)1.39WMax thermal limit
On-Resistance (Rds(on))520mΩ@1.5VResistance when turned fully on
Gate Threshold (Vgs(th))950mVVoltage required to turn on
Gate Charge (Qg)3.2nC@4.5VSwitching energy
Input Capacitance (Ciss)135.2pFInternal gate capacitance
Output Capacitance (Coss)19.4pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMN2030UCA4-7 N-Channel Array - 20V 6.3A 36mΩ@3.8V 1.4V
DIODES 📄 PDF
EPC2100 N-Channel Array - 30V 10A;40A 8.2mΩ
2.1mΩ
1.3V
EPC2111 N-Channel Array - 30V 16A 14mΩ
6mΩ
1.4V
ECH8664R-TL-H N-Channel Array - 30V 7A 34mΩ@2.5V 1.3V
onsemi 📄 PDF
HP4936DY N-Channel Array - 30V 5.8A 55mΩ@4.5V 1V
ECH8662-TL-H N-Channel Array - 40V 6.5A 42mΩ@2.5V 1.3V
onsemi 📄 PDF
EPC2101 N-Channel Array - 60V 10A;40A 8.4mΩ
2.8mΩ
1.3V
EPC2102 N-Channel Array - 60V 30A 3.6mΩ 1.3V
EPC2105 N-Channel Array - 80V 10A;40A 14.5mΩ
3.6mΩ
1.3V
EPC2103 N-Channel Array - 80V 30A 4mΩ 1.3V
EPC2104 N-Channel Array - 120V 30A 5mΩ 1.3V
EPC2110 N-Channel Array - 120V 3.4A 80mΩ 1.4V