EPC2110 MOSFET Array Datasheet & Equivalents
N-Channel Array
-
Logic-Level
EPC
Vds Max
120V
Id Max
3.4A
Rds(on)
80mΩ
Vgs(th)
1.4V
Quick Reference
The EPC2110 is a N-Channel Array in a - package, manufactured by EPC. Each channel supports a drain-source breakdown voltage of 120V and a continuous drain current of 3.4A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | EPC | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 120V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3.4A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 80mΩ | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.4V | Voltage required to turn on |
| Gate Charge (Qg) | 0.8nC | Switching energy |
| Input Capacitance (Ciss) | 85pF | Internal gate capacitance |
| Output Capacitance (Coss) | 45pF | Internal output capacitance |
| Operating Temp | -40℃~+150℃ | Safe junction temperature range |