DMN2030UCA4-7 MOSFET Array Datasheet & Equivalents

N-Channel Array - Logic-Level DIODES
Vds Max
20V
Id Max
6.3A
Rds(on)
36mΩ@3.8V
Vgs(th)
1.4V

Quick Reference

The DMN2030UCA4-7 is a N-Channel Array in a - package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 6.3A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)6.3AMax current handling
Power Dissipation (Pd)1.9WMax thermal limit
On-Resistance (Rds(on))36mΩ@3.8VResistance when turned fully on
Gate Threshold (Vgs(th))1.4VVoltage required to turn on
Gate Charge (Qg)5.6nC@4VSwitching energy
Input Capacitance (Ciss)523pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
EPC2100 N-Channel Array - 30V 10A;40A 8.2mΩ
2.1mΩ
1.3V
DMT35M8LDG-7 N-Channel Array - 30V 17A 4.7mΩ@10V 1.9V
DIODES 📄 PDF
DMT35M8LDG-13 N-Channel Array - 30V 17A 5.7mΩ@4.5V 1.9V
DIODES 📄 PDF
EPC2111 N-Channel Array - 30V 16A 14mΩ
6mΩ
1.4V
ECH8664R-TL-H N-Channel Array - 30V 7A 34mΩ@2.5V 1.3V
onsemi 📄 PDF
ECH8662-TL-H N-Channel Array - 40V 6.5A 42mΩ@2.5V 1.3V
onsemi 📄 PDF
EPC2101 N-Channel Array - 60V 10A;40A 8.4mΩ
2.8mΩ
1.3V
EPC2102 N-Channel Array - 60V 30A 3.6mΩ 1.3V
EPC2105 N-Channel Array - 80V 10A;40A 14.5mΩ
3.6mΩ
1.3V
EPC2103 N-Channel Array - 80V 30A 4mΩ 1.3V
EPC2104 N-Channel Array - 120V 30A 5mΩ 1.3V