EPC2100 MOSFET Array Datasheet & Equivalents
N-Channel Array
-
Logic-Level
EPC
Vds Max
30V
Id Max
10A;40A
Rds(on)
8.2mΩ;2.1mΩ
Vgs(th)
1.3V
Quick Reference
The EPC2100 is a N-Channel Array in a - package, manufactured by EPC. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 10A;40A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | EPC | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 10A;40A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 8.2mΩ;2.1mΩ | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.3V | Voltage required to turn on |
| Gate Charge (Qg) | 3.6nC;15nC | Switching energy |
| Input Capacitance (Ciss) | 395pF;1630pF | Internal gate capacitance |
| Output Capacitance (Coss) | 290pF;1370pF | Internal output capacitance |
| Operating Temp | -40℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| EPC2111 | N-Channel Array | - | 30V | 16A | 14mΩ 6mΩ |
1.4V | EPC 📄 PDF |
| EPC2101 | N-Channel Array | - | 60V | 10A;40A | 8.4mΩ 2.8mΩ |
1.3V | EPC 📄 PDF |
| EPC2102 | N-Channel Array | - | 60V | 30A | 3.6mΩ | 1.3V | EPC 📄 PDF |
| EPC2105 | N-Channel Array | - | 80V | 10A;40A | 14.5mΩ 3.6mΩ |
1.3V | EPC 📄 PDF |
| EPC2103 | N-Channel Array | - | 80V | 30A | 4mΩ | 1.3V | EPC 📄 PDF |
| EPC2104 | N-Channel Array | - | 120V | 30A | 5mΩ | 1.3V | EPC 📄 PDF |