EPC2111 MOSFET Array Datasheet & Equivalents
N-Channel Array
-
Logic-Level
EPC
Vds Max
30V
Id Max
16A
Rds(on)
14mΩ;6mΩ
Vgs(th)
1.4V
Quick Reference
The EPC2111 is a N-Channel Array in a - package, manufactured by EPC. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 16A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | EPC | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 16A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 14mΩ;6mΩ | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.4V | Voltage required to turn on |
| Gate Charge (Qg) | 1.7nC;4.5nC | Switching energy |
| Input Capacitance (Ciss) | 190pF;495pF | Internal gate capacitance |
| Output Capacitance (Coss) | 170pF;490pF | Internal output capacitance |
| Operating Temp | -40℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMT35M8LDG-7 | N-Channel Array | - | 30V | 17A | 4.7mΩ@10V | 1.9V | DIODES 📄 PDF |
| DMT35M8LDG-13 | N-Channel Array | - | 30V | 17A | 5.7mΩ@4.5V | 1.9V | DIODES 📄 PDF |
| EPC2102 | N-Channel Array | - | 60V | 30A | 3.6mΩ | 1.3V | EPC 📄 PDF |
| EPC2103 | N-Channel Array | - | 80V | 30A | 4mΩ | 1.3V | EPC 📄 PDF |
| EPC2104 | N-Channel Array | - | 120V | 30A | 5mΩ | 1.3V | EPC 📄 PDF |