ECH8662-TL-H MOSFET Array Datasheet & Equivalents

N-Channel Array - Logic-Level onsemi
Vds Max
40V
Id Max
6.5A
Rds(on)
42mΩ@2.5V
Vgs(th)
1.3V

Quick Reference

The ECH8662-TL-H is a N-Channel Array in a - package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 40V and a continuous drain current of 6.5A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)6.5AMax current handling
Power Dissipation (Pd)1.3WMax thermal limit
On-Resistance (Rds(on))42mΩ@2.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.3VVoltage required to turn on
Gate Charge (Qg)12nC@4.5VSwitching energy
Input Capacitance (Ciss)1.13nFInternal gate capacitance
Output Capacitance (Coss)77pFInternal output capacitance
Operating Temp-40℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
EPC2101 N-Channel Array - 60V 10A;40A 8.4mΩ
2.8mΩ
1.3V
EPC2102 N-Channel Array - 60V 30A 3.6mΩ 1.3V
EPC2105 N-Channel Array - 80V 10A;40A 14.5mΩ
3.6mΩ
1.3V
EPC2103 N-Channel Array - 80V 30A 4mΩ 1.3V
EPC2104 N-Channel Array - 120V 30A 5mΩ 1.3V