HP4936DY MOSFET Array Datasheet & Equivalents (TI, -)

N-Channel Array - Logic-Level TI
Vds Max
30V
Id Max
5.8A
Rds(on)
55mΩ@4.5V
Vgs(th)
1V

Quick Reference

The HP4936DY is a N-Channel Array in a - package, manufactured by TI. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 5.8A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTIOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)5.8AMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))55mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)25nC@10VSwitching energy
Input Capacitance (Ciss)625pFInternal gate capacitance
Output Capacitance (Coss)270pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
EPC2100 N-Channel Array - 30V 10A;40A 8.2mΩ
2.1mΩ
1.3V
EPC2111 N-Channel Array - 30V 16A 14mΩ
6mΩ
1.4V
ECH8664R-TL-H N-Channel Array - 30V 7A 34mΩ@2.5V 1.3V
onsemi 📄 PDF
ECH8662-TL-H N-Channel Array - 40V 6.5A 42mΩ@2.5V 1.3V
onsemi 📄 PDF
EPC2101 N-Channel Array - 60V 10A;40A 8.4mΩ
2.8mΩ
1.3V
EPC2102 N-Channel Array - 60V 30A 3.6mΩ 1.3V
EPC2105 N-Channel Array - 80V 10A;40A 14.5mΩ
3.6mΩ
1.3V
EPC2103 N-Channel Array - 80V 30A 4mΩ 1.3V
EPC2104 N-Channel Array - 120V 30A 5mΩ 1.3V