KSD882YSTU-HXY Transistor Datasheet & Specifications

NPN TO-126 General Purpose HXY MOSFET
VCEO
30V
Ic Max
3A
Pd Max
1.25W
hFE Gain
-

Quick Reference

The KSD882YSTU-HXY is a NPN bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the KSD882YSTU-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic3ACollector current
Pd1.25WPower dissipation
DC Current Gain-hFE / Beta
Frequency5MHzTransition speed (fT)
VCEsat300@1A,2VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SD882 NPN TO-126 30V 3A 12.5W
D882(RANGE:160-320) NPN TO-126 30V 3A 1.25W
KTD882-Y-U/PH-HXY NPN TO-126 30V 3A 1.25W
BD237STU-HXY NPN TO-126 100V 15A 1W
2SD882 NPN TO-126 30V 3A 1.25W
BD437 NPN TO-126 45V 4A 36W
2SD882L-P-T60-K NPN TO-126 30V 3A 1W
KSD1691YSTU NPN TO-126 60V 5A 1.3W
BD681 NPN TO-126 100V 4A 2W
3DD4244DM NPN TO-126 400V 3A 60W