2SD882 Transistor Datasheet & Specifications

NPN TO-126 General Purpose HXY MOSFET
VCEO
30V
Ic Max
3A
Pd Max
1.25W
hFE Gain
-

Quick Reference

The 2SD882 is a NPN bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the 2SD882 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic3ACollector current
Pd1.25WPower dissipation
DC Current Gain-hFE / Beta
Frequency5MHzTransition speed (fT)
VCEsat500mV@2A,0.2ASaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SD882 NPN TO-126 30V 3A 12.5W
D882(RANGE:160-320) NPN TO-126 30V 3A 1.25W
KTD882-Y-U/PH-HXY NPN TO-126 30V 3A 1.25W
BD237STU-HXY NPN TO-126 100V 15A 1W
BD437 NPN TO-126 45V 4A 36W
2SD882L-P-T60-K NPN TO-126 30V 3A 1W
KSD1691YSTU NPN TO-126 60V 5A 1.3W
BD681 NPN TO-126 100V 4A 2W
3DD4244DM NPN TO-126 400V 3A 60W
BD441 NPN TO-126 80V 4A 25W