KSD1691YSTU Transistor Datasheet & Specifications
NPN
TO-126
General Purpose
onsemi
VCEO
60V
Ic Max
5A
Pd Max
1.3W
hFE Gain
60
Quick Reference
The KSD1691YSTU is a NPN bipolar transistor in a TO-126 package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 5A continuous collector current. Download the KSD1691YSTU datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 5A | Collector current |
| Pd | 1.3W | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 300mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| BD237STU-HXY | NPN | TO-126 | 100V | 15A | 1W |