2SD882L-P-T60-K Transistor Datasheet & Specifications

NPN TO-126 General Purpose UTC
VCEO
30V
Ic Max
3A
Pd Max
1W
hFE Gain
160

Quick Reference

The 2SD882L-P-T60-K is a NPN bipolar transistor in a TO-126 package by UTC. This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the 2SD882L-P-T60-K datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic3ACollector current
Pd1WPower dissipation
DC Current Gain160hFE / Beta
Frequency80MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SD882 NPN TO-126 30V 3A 12.5W
D882(RANGE:160-320) NPN TO-126 30V 3A 1.25W
KTD882-Y-U/PH-HXY NPN TO-126 30V 3A 1.25W
BD237STU-HXY NPN TO-126 100V 15A 1W
2SD882 NPN TO-126 30V 3A 1.25W
BD437 NPN TO-126 45V 4A 36W
KSD1691YSTU NPN TO-126 60V 5A 1.3W
BD681 NPN TO-126 100V 4A 2W
3DD4244DM NPN TO-126 400V 3A 60W
BD441 NPN TO-126 80V 4A 25W