DSS5540X-13 Transistor Datasheet & Specifications

PNP SOT-89 General Purpose DIODES
VCEO
40V
Ic Max
4A
Pd Max
900mW
hFE Gain
150

Quick Reference

The DSS5540X-13 is a PNP bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 40V breakdown voltage and 4A continuous collector current. Download the DSS5540X-13 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic4ACollector current
Pd900mWPower dissipation
DC Current Gain150hFE / Beta
Frequency60MHzTransition speed (fT)
VCEsat70mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP2012ZTA PNP SOT-89 60V 4.3A 1.5W
ZX5T3ZTA PNP SOT-89 40V 5.5A 3W
PBSS4041PX,115 PNP SOT-89 60V 5A 2.5W
2SA2016-TD-E PNP SOT-89 50V 7A 3.5W
2SA2013-TD-E PNP SOT-89 50V 4A 3.5W
PBSS304PX PNP SOT-89 60V 4.3A 2.1W
PBSS5480XZ PNP SOT-89 80V 4A 1.4W
LBTP560Y3T1G PNP SOT-89 60V 4.3A 550mW