ZX5T3ZTA Transistor Datasheet & Specifications
PNP
SOT-89
High Power
DIODES
VCEO
40V
Ic Max
5.5A
Pd Max
3W
hFE Gain
200
Quick Reference
The ZX5T3ZTA is a PNP bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 40V breakdown voltage and 5.5A continuous collector current. Download the ZX5T3ZTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 5.5A | Collector current |
| Pd | 3W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 152MHz | Transition speed (fT) |
| VCEsat | 60mV | Saturation voltage |
| Vebo | 7.5V | Emitter-Base voltage |
| Cutoff Current | 20nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SA2016-TD-E | PNP | SOT-89 | 50V | 7A | 3.5W |