2SA2016-TD-E Transistor Datasheet & Specifications

PNP SOT-89 High Power onsemi
VCEO
50V
Ic Max
7A
Pd Max
3.5W
hFE Gain
200
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Quick Reference

The 2SA2016-TD-E is a PNP bipolar transistor in a SOT-89 package by onsemi. This datasheet provides complete specifications including 50V breakdown voltage and 7A continuous collector current. Download the 2SA2016-TD-E datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic7ACollector current
Pd3.5WPower dissipation
DC Current Gain200hFE / Beta
Frequency330MHzTransition speed (fT)
VCEsat160mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all SOT-89 PNP Transistors ›