LBTP560Y3T1G Transistor Datasheet & Specifications
PNP
SOT-89
General Purpose
LRC
VCEO
60V
Ic Max
4.3A
Pd Max
550mW
hFE Gain
100
Quick Reference
The LBTP560Y3T1G is a PNP bipolar transistor in a SOT-89 package by LRC. This datasheet provides complete specifications including 60V breakdown voltage and 4.3A continuous collector current. Download the LBTP560Y3T1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | LRC | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 4.3A | Collector current |
| Pd | 550mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 120MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZXTP2012ZTA | PNP | SOT-89 | 60V | 4.3A | 1.5W |
| PBSS4041PX,115 | PNP | SOT-89 | 60V | 5A | 2.5W |
| PBSS304PX | PNP | SOT-89 | 60V | 4.3A | 2.1W |