ZXTP2012ZTA Transistor Datasheet & Specifications
PNP
SOT-89
General Purpose
DIODES
VCEO
60V
Ic Max
4.3A
Pd Max
1.5W
hFE Gain
45
Quick Reference
The ZXTP2012ZTA is a PNP bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 60V breakdown voltage and 4.3A continuous collector current. Download the ZXTP2012ZTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 4.3A | Collector current |
| Pd | 1.5W | Power dissipation |
| DC Current Gain | 45 | hFE / Beta |
| Frequency | 120MHz | Transition speed (fT) |
| VCEsat | 65mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 20nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| PBSS4041PX,115 | PNP | SOT-89 | 60V | 5A | 2.5W |
| PBSS304PX | PNP | SOT-89 | 60V | 4.3A | 2.1W |
| LBTP560Y3T1G | PNP | SOT-89 | 60V | 4.3A | 550mW |