2SA2013-TD-E Transistor Datasheet & Specifications
PNP
SOT-89
High Power
onsemi
VCEO
50V
Ic Max
4A
Pd Max
3.5W
hFE Gain
200
Quick Reference
The 2SA2013-TD-E is a PNP bipolar transistor in a SOT-89 package by onsemi. This datasheet provides complete specifications including 50V breakdown voltage and 4A continuous collector current. Download the 2SA2013-TD-E datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 4A | Collector current |
| Pd | 3.5W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 360MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZXTP2012ZTA | PNP | SOT-89 | 60V | 4.3A | 1.5W |
| PBSS4041PX,115 | PNP | SOT-89 | 60V | 5A | 2.5W |
| 2SA2016-TD-E | PNP | SOT-89 | 50V | 7A | 3.5W |
| PBSS304PX | PNP | SOT-89 | 60V | 4.3A | 2.1W |
| PBSS5480XZ | PNP | SOT-89 | 80V | 4A | 1.4W |
| LBTP560Y3T1G | PNP | SOT-89 | 60V | 4.3A | 550mW |