PBSS5480XZ Transistor Datasheet & Specifications
PNP
SOT-89
General Purpose
Nexperia
VCEO
80V
Ic Max
4A
Pd Max
1.4W
hFE Gain
200
Quick Reference
The PBSS5480XZ is a PNP bipolar transistor in a SOT-89 package by Nexperia. This datasheet provides complete specifications including 80V breakdown voltage and 4A continuous collector current. Download the PBSS5480XZ datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 4A | Collector current |
| Pd | 1.4W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 125MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |