BD137G-HYX Transistor Datasheet & Specifications

NPN TO-126 General Purpose HXY MOSFET
VCEO
60V
Ic Max
1.5A
Pd Max
1W
hFE Gain
25

Quick Reference

The BD137G-HYX is a NPN bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 60V breakdown voltage and 1.5A continuous collector current. Download the BD137G-HYX datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic1.5ACollector current
Pd1WPower dissipation
DC Current Gain25hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat500mV@1.5A,0.15ASaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ST13003-K-HXY NPN TO-126 500V 1.5A 1.25W
KSE13003-AS-HXY NPN TO-126 500V 1.5A 1.25W
BD140 NPN TO-126 80V 1.5A 1W
BD235 NPN TO-126 60V 2A 1W
BD237STU-HXY NPN TO-126 100V 15A 1W
BD139 NPN TO-126 80V 1.5A 12.5W
3DD4242DM-126 NPN TO-126 400V 1.5A 20W
KSD1691YSTU NPN TO-126 60V 5A 1.3W
13003 NPN TO-126 400V 2A 30W
YFW13003 NPN TO-126 480V 1.5A 1.25W