BD136 Transistor Datasheet & Specifications

NPN TO-126 General Purpose HXY MOSFET
VCEO
45V
Ic Max
1.5A
Pd Max
1W
hFE Gain
300

Quick Reference

The BD136 is a NPN bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 45V breakdown voltage and 1.5A continuous collector current. Download the BD136 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic1.5ACollector current
Pd1WPower dissipation
DC Current Gain300hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat500mV@1.5A,0.15ASaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ST13003-K-HXY NPN TO-126 500V 1.5A 1.25W
KSE13003-AS-HXY NPN TO-126 500V 1.5A 1.25W
BD140 NPN TO-126 80V 1.5A 1W
BD13516STU-HXY NPN TO-126 45V 1.5A 1W
BD137G-HYX NPN TO-126 60V 1.5A 1W
BD235 NPN TO-126 60V 2A 1W
BD237STU-HXY NPN TO-126 100V 15A 1W
BD437 NPN TO-126 45V 4A 36W
BD139 NPN TO-126 80V 1.5A 12.5W
3DD4242DM-126 NPN TO-126 400V 1.5A 20W