2SB1386T100R Transistor Datasheet & Specifications

PNP SOT-89 General Purpose ROHM
VCEO
20V
Ic Max
5A
Pd Max
500mW
hFE Gain
180

Quick Reference

The 2SB1386T100R is a PNP bipolar transistor in a SOT-89 package by ROHM. This datasheet provides complete specifications including 20V breakdown voltage and 5A continuous collector current. Download the 2SB1386T100R datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO20VBreakdown voltage
Ic5ACollector current
Pd500mWPower dissipation
DC Current Gain180hFE / Beta
Frequency120MHzTransition speed (fT)
VCEsat1VSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current500nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP2008ZTA PNP SOT-89 30V 5.5A 12W
ZX5T3ZTA PNP SOT-89 40V 5.5A 3W
PBSS4041PX,115 PNP SOT-89 60V 5A 2.5W
2SA2016-TD-E PNP SOT-89 50V 7A 3.5W
2SAR542PT100 PNP SOT-89 30V 5A 2W
PBSS303PX,115 PNP SOT-89 30V 5.1A 2.1W
2SB1386-JSM PNP SOT-89 20V 5A 500mW
2SB1386 PNP SOT-89 20V 5A 500mW