ZXTP2008ZTA Transistor Datasheet & Specifications
PNP
SOT-89
High Power
DIODES
VCEO
30V
Ic Max
5.5A
Pd Max
12W
hFE Gain
70
Quick Reference
The ZXTP2008ZTA is a PNP bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 30V breakdown voltage and 5.5A continuous collector current. Download the ZXTP2008ZTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 5.5A | Collector current |
| Pd | 12W | Power dissipation |
| DC Current Gain | 70 | hFE / Beta |
| Frequency | 110MHz | Transition speed (fT) |
| VCEsat | 60mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 20nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZX5T3ZTA | PNP | SOT-89 | 40V | 5.5A | 3W |
| 2SA2016-TD-E | PNP | SOT-89 | 50V | 7A | 3.5W |