2SB1386 Transistor Datasheet & Specifications
PNP
SOT-89
General Purpose
LGE
VCEO
20V
Ic Max
5A
Pd Max
500mW
hFE Gain
230
Quick Reference
The 2SB1386 is a PNP bipolar transistor in a SOT-89 package by LGE. This datasheet provides complete specifications including 20V breakdown voltage and 5A continuous collector current. Download the 2SB1386 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | LGE | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 20V | Breakdown voltage |
| Ic | 5A | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | 230 | hFE / Beta |
| Frequency | 120MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZXTP2008ZTA | PNP | SOT-89 | 30V | 5.5A | 12W |
| ZX5T3ZTA | PNP | SOT-89 | 40V | 5.5A | 3W |
| PBSS4041PX,115 | PNP | SOT-89 | 60V | 5A | 2.5W |
| 2SA2016-TD-E | PNP | SOT-89 | 50V | 7A | 3.5W |
| 2SAR542PT100 | PNP | SOT-89 | 30V | 5A | 2W |
| PBSS303PX,115 | PNP | SOT-89 | 30V | 5.1A | 2.1W |
| 2SB1386T100R | PNP | SOT-89 | 20V | 5A | 500mW |
| 2SB1386-JSM | PNP | SOT-89 | 20V | 5A | 500mW |