2SB1386-JSM Transistor Datasheet & Specifications
PNP
SOT-89
General Purpose
JSMSEMI
VCEO
20V
Ic Max
5A
Pd Max
500mW
hFE Gain
390
Quick Reference
The 2SB1386-JSM is a PNP bipolar transistor in a SOT-89 package by JSMSEMI. This datasheet provides complete specifications including 20V breakdown voltage and 5A continuous collector current. Download the 2SB1386-JSM datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 20V | Breakdown voltage |
| Ic | 5A | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | 390 | hFE / Beta |
| Frequency | 120MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZXTP2008ZTA | PNP | SOT-89 | 30V | 5.5A | 12W |
| ZX5T3ZTA | PNP | SOT-89 | 40V | 5.5A | 3W |
| PBSS4041PX,115 | PNP | SOT-89 | 60V | 5A | 2.5W |
| 2SA2016-TD-E | PNP | SOT-89 | 50V | 7A | 3.5W |
| 2SAR542PT100 | PNP | SOT-89 | 30V | 5A | 2W |
| PBSS303PX,115 | PNP | SOT-89 | 30V | 5.1A | 2.1W |
| 2SB1386T100R | PNP | SOT-89 | 20V | 5A | 500mW |
| 2SB1386 | PNP | SOT-89 | 20V | 5A | 500mW |