PBSS303PX,115 Transistor Datasheet & Specifications
PNP
SOT-89
High Power
Nexperia
VCEO
30V
Ic Max
5.1A
Pd Max
2.1W
hFE Gain
200
Quick Reference
The PBSS303PX,115 is a PNP bipolar transistor in a SOT-89 package by Nexperia. This datasheet provides complete specifications including 30V breakdown voltage and 5.1A continuous collector current. Download the PBSS303PX,115 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 5.1A | Collector current |
| Pd | 2.1W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 130MHz | Transition speed (fT) |
| VCEsat | 160mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZXTP2008ZTA | PNP | SOT-89 | 30V | 5.5A | 12W |
| ZX5T3ZTA | PNP | SOT-89 | 40V | 5.5A | 3W |
| 2SA2016-TD-E | PNP | SOT-89 | 50V | 7A | 3.5W |