TK6A60D(STA4,X,M) MOSFET Datasheet & Specifications

N-Channel TO-220F High-Voltage TOSHIBA
Vds Max
600V
Id Max
6A
Rds(on)
1.25ฮฉ@10V
Vgs(th)
4V

Quick Reference

The TK6A60D(STA4,X,M) is an N-Channel MOSFET in a TO-220F package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 6A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageTO-220FPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)6AMax current handling
Power Dissipation (Pd)40WMax thermal limit
On-Resistance (Rds(on))1.25ฮฉ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)16nC@10VSwitching energy
Input Capacitance (Ciss)800pFInternal gate capacitance
Output Capacitance (Coss)100pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

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