TK6A60D(STA4,X,M) MOSFET Datasheet & Equivalents

N-Channel TO-220F High-Voltage TOSHIBA
Vds Max
600V
Id Max
6A
Rds(on)
1.25Ī©@10V
Vgs(th)
4V

Quick Reference

The TK6A60D(STA4,X,M) is an N-Channel MOSFET in a TO-220F package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 6A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageTO-220FPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)6AMax current handling
Power Dissipation (Pd)40WMax thermal limit
On-Resistance (Rds(on))1.25Ī©@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)16nC@10VSwitching energy
Input Capacitance (Ciss)800pFInternal gate capacitance
Output Capacitance (Coss)100pFInternal output capacitance
Operating Temp-55ā„ƒ~+150ā„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
WGF60R160L N-Channel TO-220F 600V 20A 190mΩ@10V 4V
Wild Goose šŸ“„ PDF
DOPF18N65S N-Channel TO-220F 650V 18A 120mΩ@10V 3.5V
DOINGTER šŸ“„ PDF
CRJF190N65GCF N-Channel TO-220F 650V 20A 210mΩ@10V 4.5V
CRMICRO šŸ“„ PDF
NCE65T260F N-Channel TO-220F 650V 15A 260mΩ@10V 4V
SE18NS65F N-Channel TO-220F 650V 18A 260mΩ@10V 4.5V
SINO-IC šŸ“„ PDF
YFW65R380AF N-Channel TO-220F 650V 11A 340mΩ@10V 4V
DOPF20N65 N-Channel TO-220F 650V 20A 350mΩ@10V 4V
DOINGTER šŸ“„ PDF
BCT20N65 N-Channel TO-220F 650V 20A 500mΩ@10V 4V
baocheng šŸ“„ PDF
APC65R550FM N-Channel TO-220F 650V 8A 550mΩ@10V 4V
ALLPOWER šŸ“„ PDF
BCT12N65 N-Channel TO-220F 650V 12A 800mΩ@10V 4V
baocheng šŸ“„ PDF
7N65F N-Channel TO-220F 650V 7A 1.1Ī©@10V 4V
APC70R360FM N-Channel TO-220F 700V 13A 360mΩ@10V 4V
ALLPOWER šŸ“„ PDF
MMF80R290RTH N-Channel TO-220F 800V 17A 250mΩ@10V 3V
MagnaChip Sem... šŸ“„ PDF