DOPF18N65S MOSFET Datasheet & Specifications
N-Channel
TO-220F
High-Voltage
DOINGTER
Vds Max
650V
Id Max
18A
Rds(on)
120mΩ@10V
Vgs(th)
3.5V
Quick Reference
The DOPF18N65S is an N-Channel MOSFET in a TO-220F package, manufactured by DOINGTER. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 18A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DOINGTER | Original Manufacturer |
| Package | TO-220F | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 18A | Max current handling |
| Power Dissipation (Pd) | 40W | Max thermal limit |
| On-Resistance (Rds(on)) | 120mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | 40.8nC@10V | Switching energy |
| Input Capacitance (Ciss) | 836.7pF | Internal gate capacitance |
| Output Capacitance (Coss) | 51.2pF | Internal output capacitance |
| Operating Temp | -50℃~+150℃ | Safe junction temperature range |