CRJF190N65GCF MOSFET Datasheet & Specifications

N-Channel TO-220F High-Voltage CRMICRO
Vds Max
650V
Id Max
20A
Rds(on)
210mΩ@10V
Vgs(th)
4.5V

Quick Reference

The CRJF190N65GCF is an N-Channel MOSFET in a TO-220F package, manufactured by CRMICRO. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 20A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerCRMICROOriginal Manufacturer
PackageTO-220FPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)20AMax current handling
Power Dissipation (Pd)29WMax thermal limit
On-Resistance (Rds(on))210mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4.5VVoltage required to turn on
Gate Charge (Qg)41nC@10VSwitching energy
Input Capacitance (Ciss)1.427nFInternal gate capacitance
Output Capacitance (Coss)67pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
APC65R100FMF N-Channel TO-220F 650V 31A 90mΩ@10V 5V
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APC65R125FMF N-Channel TO-220F 650V 25A 125mΩ@10V 5V
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DOPF20N65 N-Channel TO-220F 650V 20A 350mΩ@10V 4V
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BCT20N65 N-Channel TO-220F 650V 20A 500mΩ@10V 4V
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