SE18NS65F MOSFET Datasheet & Specifications

N-Channel TO-220F High-Voltage SINO-IC
Vds Max
650V
Id Max
18A
Rds(on)
260mΩ@10V
Vgs(th)
4.5V

Quick Reference

The SE18NS65F is an N-Channel MOSFET in a TO-220F package, manufactured by SINO-IC. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 18A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSINO-ICOriginal Manufacturer
PackageTO-220FPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)18AMax current handling
Power Dissipation (Pd)156WMax thermal limit
On-Resistance (Rds(on))260mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4.5VVoltage required to turn on
Gate Charge (Qg)43nC@10VSwitching energy
Input Capacitance (Ciss)800pFInternal gate capacitance
Output Capacitance (Coss)180pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
APC65R100FMF N-Channel TO-220F 650V 31A 90mΩ@10V 5V
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DOPF18N65S N-Channel TO-220F 650V 18A 120mΩ@10V 3.5V
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APC65R125FMF N-Channel TO-220F 650V 25A 125mΩ@10V 5V
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CRJF190N65GCF N-Channel TO-220F 650V 20A 210mΩ@10V 4.5V
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DOPF20N65 N-Channel TO-220F 650V 20A 350mΩ@10V 4V
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BCT20N65 N-Channel TO-220F 650V 20A 500mΩ@10V 4V
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