7N65F MOSFET Datasheet & Specifications

N-Channel TO-220F High-Voltage UMW
Vds Max
650V
Id Max
7A
Rds(on)
1.1Ī©@10V
Vgs(th)
4V
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Quick Reference

The 7N65F is an N-Channel MOSFET in a TO-220F package, manufactured by UMW. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 7A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerUMWOriginal Manufacturer
PackageTO-220FPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)7AMax current handling
Power Dissipation (Pd)83WMax thermal limit
On-Resistance (Rds(on))1.1Ī©@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)28nC@10VSwitching energy
Input Capacitance (Ciss)955pFInternal gate capacitance
Output Capacitance (Coss)120pFInternal output capacitance
Operating Temp-55ā„ƒ~+150ā„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DOPF18N65S N-Channel TO-220F 650V 18A 120mĪ©@10V 3.5V
DOINGTER šŸ“„ PDF
CRJF190N65GCF N-Channel TO-220F 650V 20A 210mĪ©@10V 4.5V
CRMICRO šŸ“„ PDF
NCE65T260F N-Channel TO-220F 650V 15A 260mĪ©@10V 4V
NCE šŸ“„ PDF
SE18NS65F N-Channel TO-220F 650V 18A 260mĪ©@10V 4.5V
SINO-IC šŸ“„ PDF
YFW65R380AF N-Channel TO-220F 650V 11A 340mĪ©@10V 4V
YFW šŸ“„ PDF
DOPF20N65 N-Channel TO-220F 650V 20A 350mĪ©@10V 4V
DOINGTER šŸ“„ PDF
BCT20N65 N-Channel TO-220F 650V 20A 500mĪ©@10V 4V
baocheng šŸ“„ PDF
APC65R550FM N-Channel TO-220F 650V 8A 550mĪ©@10V 4V
ALLPOWER šŸ“„ PDF
BCT12N65 N-Channel TO-220F 650V 12A 800mĪ©@10V 4V
baocheng šŸ“„ PDF
APC70R360FM N-Channel TO-220F 700V 13A 360mĪ©@10V 4V
ALLPOWER šŸ“„ PDF
MMF80R290RTH N-Channel TO-220F 800V 17A 250mĪ©@10V 3V
MagnaChip Sem... šŸ“„ PDF
High-Voltage N-Channel TO-220 N-Channel