MMF80R290RTH MOSFET Datasheet & Specifications

N-Channel TO-220F Logic-Level MagnaChip Semicon
Vds Max
800V
Id Max
17A
Rds(on)
250mΩ@10V
Vgs(th)
3V

Quick Reference

The MMF80R290RTH is an N-Channel MOSFET in a TO-220F package, manufactured by MagnaChip Semicon. It supports a drain-source breakdown voltage of 800V and a continuous drain current of 17A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerMagnaChip SemiconOriginal Manufacturer
PackageTO-220FPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)800VMax breakdown voltage
Continuous Drain Current (Id)17AMax current handling
Power Dissipation (Pd)43.6WMax thermal limit
On-Resistance (Rds(on))250mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)39nC@10VSwitching energy
Input Capacitance (Ciss)1.414nFInternal gate capacitance
Output Capacitance (Coss)29.7pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.