SQD50P04-13L_GE3 MOSFET Datasheet & Specifications
P-Channel
TO-252
Logic-Level
VISHAY
Vds Max
40V
Id Max
50A
Rds(on)
13mΩ@10V
Vgs(th)
2.5V
Quick Reference
The SQD50P04-13L_GE3 is an P-Channel MOSFET in a TO-252 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 50A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 50A | Max current handling |
| Power Dissipation (Pd) | 136W | Max thermal limit |
| On-Resistance (Rds(on)) | 13mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 80nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.95nF | Internal gate capacitance |
| Output Capacitance (Coss) | 508pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HSU4119 | P-Channel | TO-252 | 40V | 120A | 3.5mΩ@10V 4.5mΩ@4.5V |
1V | HUASHUO 📄 PDF |
| IPD90P04P4L04ATMA2 | P-Channel | TO-252 | 40V | 90A | 4.3mΩ@10V | 2.2V | Infineon 📄 PDF |
| SP40P04TH | P-Channel | TO-252 | 40V | 90A | 4.8mΩ@10V 6.5mΩ@4.5V |
1.7V | Siliup 📄 PDF |
| AP80P04K | P-Channel | TO-252 | 40V | 80A | 5.8mΩ@10V 7.5mΩ@4.5V |
1.6V | ALLPOWER 📄 PDF |
| DOD95P04 | P-Channel | TO-252 | 40V | 95A | 6mΩ@10V | 2.2V | DOINGTER 📄 PDF |
| SUD50P04-08-GE3 | P-Channel | TO-252 | 40V | 50A | 8.1mΩ@10V | 2.5V | VISHAY 📄 PDF |
| IPD50P04P4L11(UMW) | P-Channel | TO-252 | 40V | 50A | 8.2mΩ@10V | 1.7V | UMW 📄 PDF |
| SQD40081EL_GE3 | P-Channel | TO-252 | 40V | 50A | 8.5mΩ@10V | 2.5V | VISHAY 📄 PDF |
| STU417S | P-Channel | TO-252 | 40V | 50A | 10.5mΩ@10V 14.2mΩ@4.5V |
1.6V | MSKSEMI 📄 PDF |
| IPD50P04P4L11 | P-Channel | TO-252 | 40V | 50A | 10.6mΩ@10V | 2.2V | Infineon 📄 PDF |
| NCE40P70K(TOKMAS) | P-Channel | TO-252 | 40V | 65A | 11mΩ@10V | 2.5V | Tokmas 📄 PDF |
| APM4050PUC-TRL-VB | P-Channel | TO-252 | 40V | 50A | 12mΩ@10V | 1V | VBsemi Elec 📄 PDF |
| 50P04 | P-Channel | TO-252 | 40V | 52A | 13mΩ@10V | 2.5V | HL 📄 PDF |
| HSU6119 | P-Channel | TO-252 | 60V | 80A | 6mΩ@10V | 2V | HUASHUO 📄 PDF |
| SUD50P06-15(UMW) | P-Channel | TO-252 | 60V | 50A | 12mΩ@10V | 1.8V | UMW 📄 PDF |
| CMD80P06A | P-Channel | TO-252 | 60V | 80A | 15mΩ@10V | 3V | Cmos 📄 PDF |
| SQD50P06-15L_GE3 | P-Channel | TO-252 | 60V | 50A | 15.5mΩ@10V | 2.5V | VISHAY 📄 PDF |
| HYG120P06LR1D | P-Channel | TO-252 | 60V | 55A | 16mΩ@10V | 3V | HUAYI 📄 PDF |
| SUD50P06-15L-DO | P-Channel | TO-252 | 60V | 50A | 17mΩ@10V | 1.6V | DOINGTER 📄 PDF |
| NVD5117PLT4G(TOKMAS) | P-Channel | TO-252 | 60V | 60A | 19mΩ@10V | 2.2V | Tokmas 📄 PDF |