HYG120P06LR1D MOSFET Datasheet & Specifications
P-Channel
TO-252
Logic-Level
HUAYI
Vds Max
60V
Id Max
55A
Rds(on)
16mΩ@10V
Vgs(th)
3V
Quick Reference
The HYG120P06LR1D is an P-Channel MOSFET in a TO-252 package, manufactured by HUAYI. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 55A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUAYI | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 55A | Max current handling |
| Power Dissipation (Pd) | 75W | Max thermal limit |
| On-Resistance (Rds(on)) | 16mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 91.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 4.882nF | Internal gate capacitance |
| Output Capacitance (Coss) | 285pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HSU6119 | P-Channel | TO-252 | 60V | 80A | 6mΩ@10V | 2V | HUASHUO 📄 PDF |
| CMD80P06A | P-Channel | TO-252 | 60V | 80A | 15mΩ@10V | 3V | Cmos 📄 PDF |
| NVD5117PLT4G(TOKMAS) | P-Channel | TO-252 | 60V | 60A | 19mΩ@10V | 2.2V | Tokmas 📄 PDF |
| PJMG60P60TE | P-Channel | TO-252 | 60V | 60A | 20mΩ@4.5V | 2.5V | PJSEMI 📄 PDF |
| OSD80P06T | P-Channel | TO-252 | 60V | 80A | 20mΩ@10V | 2.1V | OSEN 📄 PDF |