SP40P04TH MOSFET Datasheet & Specifications

P-Channel TO-252 Logic-Level Siliup
Vds Max
40V
Id Max
90A
Rds(on)
4.8mΩ@10V;6.5mΩ@4.5V
Vgs(th)
1.7V

Quick Reference

The SP40P04TH is an P-Channel MOSFET in a TO-252 package, manufactured by Siliup. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 90A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSiliupOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)90AMax current handling
Power Dissipation (Pd)130WMax thermal limit
On-Resistance (Rds(on))4.8mΩ@10V;6.5mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.7VVoltage required to turn on
Gate Charge (Qg)74nC@10VSwitching energy
Input Capacitance (Ciss)6.456nFInternal gate capacitance
Output Capacitance (Coss)508pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HSU4119 P-Channel TO-252 40V 120A 3.5mΩ@10V
4.5mΩ@4.5V
1V
HUASHUO 📄 PDF
IPD90P04P4L04ATMA2 P-Channel TO-252 40V 90A 4.3mΩ@10V 2.2V
Infineon 📄 PDF
DOD95P04 P-Channel TO-252 40V 95A 6mΩ@10V 2.2V
DOINGTER 📄 PDF