DOD95P04 MOSFET Datasheet & Specifications
P-Channel
TO-252
Logic-Level
DOINGTER
Vds Max
40V
Id Max
95A
Rds(on)
6mΩ@10V
Vgs(th)
2.2V
Quick Reference
The DOD95P04 is an P-Channel MOSFET in a TO-252 package, manufactured by DOINGTER. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 95A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DOINGTER | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 95A | Max current handling |
| Power Dissipation (Pd) | 60W | Max thermal limit |
| On-Resistance (Rds(on)) | 6mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.2V | Voltage required to turn on |
| Gate Charge (Qg) | 72nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.95nF | Internal gate capacitance |
| Output Capacitance (Coss) | 460pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |