STU417S MOSFET Datasheet & Specifications

P-Channel TO-252 Logic-Level MSKSEMI
Vds Max
40V
Id Max
50A
Rds(on)
10.5mΩ@10V;14.2mΩ@4.5V
Vgs(th)
1.6V

Quick Reference

The STU417S is an P-Channel MOSFET in a TO-252 package, manufactured by MSKSEMI. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 50A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)50AMax current handling
Power Dissipation (Pd)55WMax thermal limit
On-Resistance (Rds(on))10.5mΩ@10V;14.2mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.6VVoltage required to turn on
Gate Charge (Qg)28nC@10VSwitching energy
Input Capacitance (Ciss)2.05nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HSU4119 P-Channel TO-252 40V 120A 3.5mΩ@10V
4.5mΩ@4.5V
1V
HUASHUO 📄 PDF
SP40P04TH P-Channel TO-252 40V 90A 4.8mΩ@10V
6.5mΩ@4.5V
1.7V
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AP80P04K P-Channel TO-252 40V 80A 5.8mΩ@10V
7.5mΩ@4.5V
1.6V
ALLPOWER 📄 PDF
IPD50P04P4L11(UMW) P-Channel TO-252 40V 50A 8.2mΩ@10V 1.7V
APM4050PUC-TRL-VB P-Channel TO-252 40V 50A 12mΩ@10V 1V
VBsemi Elec 📄 PDF
HSU6119 P-Channel TO-252 60V 80A 6mΩ@10V 2V
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SUD50P06-15(UMW) P-Channel TO-252 60V 50A 12mΩ@10V 1.8V
SUD50P06-15L-DO P-Channel TO-252 60V 50A 17mΩ@10V 1.6V
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VBE2625 P-Channel TO-252 60V 50A 20mΩ@10V
25mΩ@4.5V
1.5V
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OSD80P06T P-Channel TO-252 60V 80A 20mΩ@10V 2.1V
SQD50P08-25L_GE3 P-Channel TO-252 80V 50A 25mΩ@10V 1.5V
VISHAY 📄 PDF