AP80P04K MOSFET Datasheet & Specifications
P-Channel
TO-252
Logic-Level
ALLPOWER
Vds Max
40V
Id Max
80A
Rds(on)
5.8mΩ@10V;7.5mΩ@4.5V
Vgs(th)
1.6V
Quick Reference
The AP80P04K is an P-Channel MOSFET in a TO-252 package, manufactured by ALLPOWER. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 80A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ALLPOWER | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 80A | Max current handling |
| Power Dissipation (Pd) | 130W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.8mΩ@10V;7.5mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.6V | Voltage required to turn on |
| Gate Charge (Qg) | 84nC@10V | Switching energy |
| Input Capacitance (Ciss) | 5.4nF | Internal gate capacitance |
| Output Capacitance (Coss) | 700pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HSU4119 | P-Channel | TO-252 | 40V | 120A | 3.5mΩ@10V 4.5mΩ@4.5V |
1V | HUASHUO 📄 PDF |
| SP40P04TH | P-Channel | TO-252 | 40V | 90A | 4.8mΩ@10V 6.5mΩ@4.5V |
1.7V | Siliup 📄 PDF |
| HSU6119 | P-Channel | TO-252 | 60V | 80A | 6mΩ@10V | 2V | HUASHUO 📄 PDF |
| OSD80P06T | P-Channel | TO-252 | 60V | 80A | 20mΩ@10V | 2.1V | OSEN 📄 PDF |