VBE2625 MOSFET Datasheet & Specifications
P-Channel
TO-252
Logic-Level
VBsemi Elec
Vds Max
60V
Id Max
50A
Rds(on)
20mΩ@10V;25mΩ@4.5V
Vgs(th)
1.5V
Quick Reference
The VBE2625 is an P-Channel MOSFET in a TO-252 package, manufactured by VBsemi Elec. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 50A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VBsemi Elec | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 50A | Max current handling |
| Power Dissipation (Pd) | 113W | Max thermal limit |
| On-Resistance (Rds(on)) | 20mΩ@10V;25mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 110nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.95nF | Internal gate capacitance |
| Output Capacitance (Coss) | 380pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HSU6119 | P-Channel | TO-252 | 60V | 80A | 6mΩ@10V | 2V | HUASHUO 📄 PDF |
| SUD50P06-15(UMW) | P-Channel | TO-252 | 60V | 50A | 12mΩ@10V | 1.8V | UMW 📄 PDF |
| SUD50P06-15L-DO | P-Channel | TO-252 | 60V | 50A | 17mΩ@10V | 1.6V | DOINGTER 📄 PDF |
| SQD50P08-25L_GE3 | P-Channel | TO-252 | 80V | 50A | 25mΩ@10V | 1.5V | VISHAY 📄 PDF |