SP52N120CTK MOSFET Datasheet & Specifications

N-Channel TO-247-4L Logic-Level Siliup
Vds Max
1.2kV
Id Max
52A
Rds(on)
32mฮฉ@18V
Vgs(th)
2.8V
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Quick Reference

The SP52N120CTK is an N-Channel MOSFET in a TO-247-4L package, manufactured by Siliup. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 52A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSiliupOriginal Manufacturer
PackageTO-247-4LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1.2kVMax breakdown voltage
Continuous Drain Current (Id)52AMax current handling
Power Dissipation (Pd)357WMax thermal limit
On-Resistance (Rds(on))32mฮฉ@18VResistance when turned fully on
Gate Threshold (Vgs(th))2.8VVoltage required to turn on
Gate Charge (Qg)139nCSwitching energy
Input Capacitance (Ciss)3.177nFInternal gate capacitance
Output Capacitance (Coss)142pFInternal output capacitance
Operating Temp-55โ„ƒ~+175โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SP80N120CTK N-Channel TO-247-4L 1.2kV 120A 13mฮฉ@18V 2.5V
Siliup ๐Ÿ“„ PDF
NTH4L014N120M3P N-Channel TO-247-4L 1.2kV 127A 14mฮฉ@18V 3V
onsemi ๐Ÿ“„ PDF
S1M014120H N-Channel TO-247-4L 1.2kV 152A 14mฮฉ 2.8V
Sichainsemi ๐Ÿ“„ PDF
S1M032120H N-Channel TO-247-4L 1.2kV 87A 27mฮฉ@18V 2.8V
Sichainsemi ๐Ÿ“„ PDF
S1M040120H N-Channel TO-247-4L 1.2kV 76A 32mฮฉ@18V 2.8V
Sichainsemi ๐Ÿ“„ PDF
BCZ120N40M1 N-Channel TO-247-4L 1.2kV 60A 40mฮฉ 3V
Bestirpower ๐Ÿ“„ PDF
CI60N120SM4 N-Channel TO-247-4L 1.2kV 60A 45mฮฉ@20V 2.5V
Tokmas ๐Ÿ“„ PDF
SG2M021120LH N-Channel TO-247-4L 1.2kV 112A - 2.8V
Sichainsemi ๐Ÿ“„ PDF
SG2M020170HJ N-Channel TO-247-4L 1.7kV 110A - 3.1V
Sichainsemi ๐Ÿ“„ PDF
Logic-Level N-Channel High-Voltage N-Channel High-Current N-Channel TO-247 N-Channel