NTH4L014N120M3P MOSFET Datasheet & Specifications

N-Channel TO-247-4L Logic-Level onsemi
Vds Max
1.2kV
Id Max
127A
Rds(on)
14mΩ@18V
Vgs(th)
3V

Quick Reference

The NTH4L014N120M3P is an N-Channel MOSFET in a TO-247-4L package, manufactured by onsemi. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 127A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-247-4LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1.2kVMax breakdown voltage
Continuous Drain Current (Id)127AMax current handling
Power Dissipation (Pd)343WMax thermal limit
On-Resistance (Rds(on))14mΩ@18VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)329nCSwitching energy
Input Capacitance (Ciss)6.23nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
S1M014120H N-Channel TO-247-4L 1.2kV 152A 14mΩ 2.8V
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