SG2M021120LH MOSFET Datasheet & Specifications

N-Channel TO-247-4L Logic-Level Sichainsemi
Vds Max
1.2kV
Id Max
112A
Rds(on)
-
Vgs(th)
2.8V

Quick Reference

The SG2M021120LH is an N-Channel MOSFET in a TO-247-4L package, manufactured by Sichainsemi. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 112A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSichainsemiOriginal Manufacturer
PackageTO-247-4LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1.2kVMax breakdown voltage
Continuous Drain Current (Id)112AMax current handling
Power Dissipation (Pd)441WMax thermal limit
On-Resistance (Rds(on))-Resistance when turned fully on
Gate Threshold (Vgs(th))2.8VVoltage required to turn on
Gate Charge (Qg)119nCSwitching energy
Input Capacitance (Ciss)4.13nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55โ„ƒ~+175โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SP80N120CTK N-Channel TO-247-4L 1.2kV 120A 13mฮฉ@18V 2.5V
NTH4L014N120M3P N-Channel TO-247-4L 1.2kV 127A 14mฮฉ@18V 3V
S1M014120H N-Channel TO-247-4L 1.2kV 152A 14mฮฉ 2.8V
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