SP80N120CTK MOSFET Datasheet & Specifications
N-Channel
TO-247-4L
Logic-Level
Siliup
Vds Max
1.2kV
Id Max
120A
Rds(on)
13mΩ@18V
Vgs(th)
2.5V
Quick Reference
The SP80N120CTK is an N-Channel MOSFET in a TO-247-4L package, manufactured by Siliup. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 120A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Siliup | Original Manufacturer |
| Package | TO-247-4L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1.2kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 120A | Max current handling |
| Power Dissipation (Pd) | 450W | Max thermal limit |
| On-Resistance (Rds(on)) | 13mΩ@18V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 216nC | Switching energy |
| Input Capacitance (Ciss) | 3.815nF | Internal gate capacitance |
| Output Capacitance (Coss) | 239pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| NTH4L014N120M3P | N-Channel | TO-247-4L | 1.2kV | 127A | 14mΩ@18V | 3V | onsemi 📄 PDF |
| S1M014120H | N-Channel | TO-247-4L | 1.2kV | 152A | 14mΩ | 2.8V | Sichainsemi 📄 PDF |