SG2M020170HJ MOSFET Datasheet & Specifications
N-Channel
TO-247-4L
High-Voltage
Sichainsemi
Vds Max
1.7kV
Id Max
110A
Rds(on)
-
Vgs(th)
3.1V
Quick Reference
The SG2M020170HJ is an N-Channel MOSFET in a TO-247-4L package, manufactured by Sichainsemi. It supports a drain-source breakdown voltage of 1.7kV and a continuous drain current of 110A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Sichainsemi | Original Manufacturer |
| Package | TO-247-4L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1.7kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 110A | Max current handling |
| Power Dissipation (Pd) | 535W | Max thermal limit |
| On-Resistance (Rds(on)) | - | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.1V | Voltage required to turn on |
| Gate Charge (Qg) | 209nC | Switching energy |
| Input Capacitance (Ciss) | 5.265nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||