CI60N120SM4 MOSFET Datasheet & Specifications

N-Channel TO-247-4L Logic-Level Tokmas
Vds Max
1.2kV
Id Max
60A
Rds(on)
45mฮฉ@20V
Vgs(th)
2.5V

Quick Reference

The CI60N120SM4 is an N-Channel MOSFET in a TO-247-4L package, manufactured by Tokmas. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 60A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTokmasOriginal Manufacturer
PackageTO-247-4LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1.2kVMax breakdown voltage
Continuous Drain Current (Id)60AMax current handling
Power Dissipation (Pd)330WMax thermal limit
On-Resistance (Rds(on))45mฮฉ@20VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)160nCSwitching energy
Input Capacitance (Ciss)3.55nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55โ„ƒ~+175โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SP80N120CTK N-Channel TO-247-4L 1.2kV 120A 13mฮฉ@18V 2.5V
NTH4L014N120M3P N-Channel TO-247-4L 1.2kV 127A 14mฮฉ@18V 3V
S1M014120H N-Channel TO-247-4L 1.2kV 152A 14mฮฉ 2.8V
Sichainsemi ๐Ÿ“„ PDF
S1M032120H N-Channel TO-247-4L 1.2kV 87A 27mฮฉ@18V 2.8V
Sichainsemi ๐Ÿ“„ PDF
S1M040120H N-Channel TO-247-4L 1.2kV 76A 32mฮฉ@18V 2.8V
Sichainsemi ๐Ÿ“„ PDF
BCZ120N40M1 N-Channel TO-247-4L 1.2kV 60A 40mฮฉ 3V
Bestirpower ๐Ÿ“„ PDF
SG2M021120LH N-Channel TO-247-4L 1.2kV 112A - 2.8V
Sichainsemi ๐Ÿ“„ PDF