MMBTA43 Datasheet & Equivalents

NPN SOT-23 General Purpose Huixin
VCEO
200V
Ic Max
500mA
Pd Max
350mW
hFE Gain
40

Quick Reference

The MMBTA43 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by Huixin. It supports a breakdown voltage of 200V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHuixinOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)200VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)350mWMax thermal limit
DC Current Gain (hFE)40Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)500mV@20mA,2mAVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBTA42 NPN SOT-23 200V 500mA 40 350mW
MMBTA42-7-F NPN SOT-23 300V 500mA 40 300mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 40 300mW
LMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
MMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
SMMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 25 225mW
S-MMBTA42LT1G NPN SOT-23 300V 500mA 60 350mW
FMMT497TA NPN SOT-23 300V 500mA 80 500mW
MMBTA42 NPN SOT-23 300V 500mA 80 250mW
MMBTA42 NPN SOT-23 300V 500mA 100 350mW
MMBTA42 NPN SOT-23 300V 500mA 200 350mW
YONGYUTAI ๐Ÿ“„ PDF
MMBTA42 NPN SOT-23 300V 500mA 300 300mW
MMBTA42 NPN SOT-23 300V 500mA 300 300mW
CMPTA42E TR PBFREE NPN SOT-23 350V 500mA 50 350mW
DN350T05-7 NPN SOT-23 350V 500mA 30 300mW
MMBT6517BEC NPN SOT-23 350V 500mA 200 200mW
STR1550 NPN SOT-23 500V 500mA 100 500mW