S-MMBTA42LT1G Datasheet & Equivalents

NPN SOT-23 General Purpose JSMSEMI
VCEO
300V
Ic Max
500mA
Pd Max
350mW
hFE Gain
60

Quick Reference

The S-MMBTA42LT1G is a NPN bipolar junction transistor in a SOT-23 package, manufactured by JSMSEMI. It supports a breakdown voltage of 300V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)300VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)350mWMax thermal limit
DC Current Gain (hFE)60Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)200mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FMMT497TA NPN SOT-23 300V 500mA 80 500mW
MMBTA42-7-F NPN SOT-23 300V 500mA 40 300mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 40 300mW
MMBTA42 NPN SOT-23 300V 500mA 80 250mW
LMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
MMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
SMMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 25 225mW
MMBTA42 NPN SOT-23 300V 500mA 100 350mW
MMBTA42 NPN SOT-23 300V 500mA 200 350mW
YONGYUTAI ๐Ÿ“„ PDF
MMBTA42 NPN SOT-23 300V 500mA 300 300mW
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CMPTA42E TR PBFREE NPN SOT-23 350V 500mA 50 350mW
DN350T05-7 NPN SOT-23 350V 500mA 30 300mW
MMBT6517BEC NPN SOT-23 350V 500mA 200 200mW
STR1550 NPN SOT-23 500V 500mA 100 500mW